溶胶凝胶法制备参氟二氧化锡薄膜

利用溶胶凝胶方法，在硅碱玻璃底板上制备的透明低电阻SnO2:F薄膜，是一种低辐射导电薄膜。将SnCl4·5H2O 和 NH4F 溶解在50%乙醇和50%水的溶液中。制备条件为底板温度450℃，喷嘴与底板之间的距离60mm,载气流速8 L/min，制备时间5分钟。制成的SnO2:F薄膜面电阻为2Ω/□，可重复性好。并且文中还定性给出了SnO2:F薄膜其红外反射率与面电阻之间的关系。

Pyrosol process for deposition of fluorine-doped tin dioxide thin films

Transparent low-resistance SnO$_{2}$:F films, suitable as a low-emissivity and conducting coating, have been deposited on silica-coated soda lime glass substrates by pyrosol process. SnCl$_{4}cdot $5H$_{2}$O and NH$_{4}$F dissolved in solvent of 50{%} C$_{2}$H$_{5}$OH/50{%} H$_{2}$O served asthe starting solution. With the parameters such as substrate temperature of 450${^circ}$C, distance between the nozzle and substrate of 60mm, carrier gas flow rate of 8L/min and deposition time of 5min, the optimized SnO$_{2}$:F films having a sheet resistance of about 2$Omega$/$Box$, weredeposited repeatedly. The relationship between sheet resistances and infrared transmission spectra of SnO$_{2}$:F films is shown schematically.