| 双波长垂直腔面发射激光器及特性研究 |
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| 引用本文： | 关宝璐,郭霞,张敬兰,任秀娟,郭帅,李硕,揣东旭,沈光地. 双波长垂直腔面发射激光器及特性研究[J]. 物理学报, 2011, 60(1): 14209-014209 |
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| 作者姓名： | 关宝璐 郭霞 张敬兰 任秀娟 郭帅 李硕 揣东旭 沈光地 |
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| 作者单位： | 北京工业大学,光电子技术省部共建教育部重点实验室,北京 100124 |
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| 基金项目： | 国家重点基础研究发展计划(批准号:2006CB604902)和国家自然科学基金(批准号:60908012)资助的课题. |
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| 摘 要： | 基于光子晶体技术在一维光子晶体带隙内引入缺陷态模式,并对激光器谐振腔内部电磁场分布和共振波长进行调制,从而将单一波长分裂为双波长输出.最终制备出了一种新的具有双波长光谱输出特性的垂直腔面发射激光器,缺陷层为Al0.8Ga0.2As材料,厚度为5λ/4.所得到的双波长输出光谱具有低吸收损耗、输出波长容易控制及同方向垂直输出特性.同时,通过调整一维光子晶体的折射率差和缺陷层厚度可以有效调谐双波长的间距及输出波段.所设计的双波长垂直腔面发射激光器结构同样关键词：垂直腔面发射激光器光子带隙双波长
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| 关 键 词： | 垂直腔面发射激光器 光子带隙 双波长 |
| 收稿时间： | 2010-01-26 |
Characteristics of dual-wavelength vertical-cavity surface-emitting lasers |
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| Guan Bao-Lu,Guo Xia,Zhang Jing-Lan,Ren Xiu-Juan,Guo Shuai,Li Shuo,Chuai Dong-Xu,Shen Guang-Di. Characteristics of dual-wavelength vertical-cavity surface-emitting lasers[J]. Acta Physica Sinica, 2011, 60(1): 14209-014209 |
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| Authors: | Guan Bao-Lu Guo Xia Zhang Jing-Lan Ren Xiu-Juan Guo Shuai Li Shuo Chuai Dong-Xu Shen Guang-Di |
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| Affiliation: | Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | Based on asymmetric one-dimensional photonic crystal structure,a dual-wavelength vertical-cavity surface-emitting laser (VCSEL) with modified standing wave field distribution has been constructed. The defect layer is Al0.8Ga0.2As with 5λ/4 thickness. Specifically, the dual-wavelength output spectrum of the VCSEL has low absorption loss, easy wavelength adjustment and same output direction. In addition, the two wavelengths and their spacing could be tuned by changing the refractive index contrast of the asymmetric PC structure and the thickness of defect layer. Such dual-VCSEL structure can be applied in optical bistable switches, amplifiers, modulators and detectors, etc.. |
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| Keywords: | VCSEL photonic crystal gap dual-wavelength |
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