Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors |
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Authors: | D Rechem S Latreche and C Gontrand |
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Institution: | (1) Laboratoire Hyperfréquence et Semi-conducteur (L.H.S), Département d’Electronique, Faculté des Sciences de l’ingénieur, Université Mentouri de Constantine, 25000 Algérie, France;(2) INL, bat. Blaise Pascal INSA 20, av. Jean Capelle, 69621 Villeurbanne Cedex, France |
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Abstract: | In this paper, we study the effects of short channel on double gate MOSFETs. We evaluate the variation of the threshold voltage, the subthreshold slope, the leakage current and the drain-induced barrier lowering when channel length L CH decreases. Furthermore, quantum effects on the performance of DG-MOSFETs are addressed and discussed. We also study the influence of metal gate work function on the performance of nanoscale MOSFETs. We use a self-consistent Poisson-Schrödinger solver in two dimensions over the entire device. A good agreement with numerical simulation results is obtained. |
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Keywords: | Nanotransistor metal oxide semiconductor field-effect transistors siliconon-insulator work function quantum effects self-consistent |
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