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Electric field modulation technique for high-voltage AIGaN/GaN Schottky barrier diodes |
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| Institution: | [1]College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China [2]Division of＇Energy, High Technology Research and Development Center, the Ministry of Science and Technology, Beijing 100044, China |
| Abstract: | gallium nitride, high voltage SBD, field plate, magnesium buried layer |
| Keywords: | gallium nitride high voltage SBD field plate magnesium buried layer |
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