| Effect of InxGal-xN ＂continuously graded＂ buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition |
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| 引用本文： | 钱卫宁,宿世臣,陈弘,马紫光,朱克宝,何苗,卢平元,王耿,卢太平,杜春花,王巧,吴汶波,张伟伟.Effect of InxGal-xN ＂continuously graded＂ buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition[J].中国物理 B,2013(10):401-405. |
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| 作者姓名： | 钱卫宁 宿世臣 陈弘 马紫光 朱克宝 何苗 卢平元 王耿 卢太平 杜春花 王巧 吴汶波 张伟伟 |
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| 作者单位： | [1]Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials ＆ Technology, South China Normal University, Guangzhou 510631, China [2]Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| 基金项目： | Project supported by the National High Technology Research and Development Program of China （Grant Nos. 201 IAA03A112, 2011AA03A106, and 2013AAO3A101）, the National Natural Science Foundation of China （Grant Nos. 11204360, 61210014, and 61078046）, the Science ＆ Technology Inno vation Program of the Department of Education of Guangdong Province, China （Grant No. 2012CXZD0017）, the Industry-Academia-Research Union Special Fund of Guangdong Province, China （Grant No. 2012B091000169）, and the Science ＆ Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund, China （Grant No. 2012B090600038）. |
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| 摘 要： | In this paper we report on the effect of an lnxGal xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.
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| 关 键 词： | InGaN 外延层生长 缓冲层 化学气相沉积 有机金属 连续级配 结晶质量 组合使用 |
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