Die Präparation von GaAs-Substraten,untersucht mit Reflexionselektroneninterferenzen

The RHEED-method is used for the examination and characterization of gallium arsenide substrates. It is shown the use of both beam focussing at the object and at the photoplate in studying this subject. It was found that the samples after abrasive cutting and machine lapping give interference patterns of mechanical damaged surfaces with characteristical features. Lap polished surfaces give Kikuchi pattern and a rel-rod pattern of perfect single crystal which is nearly smooth in the atomic level. Critical remarks are given on the Kikuchi pattern as a feature of perfection of the crystal. Results on the penetration depth of rough defects due to machine lapping are in good agreement with data from literature.