Reflection Splitting in RHEED Investigations of Vacuum Evaporated GaAs Layers

RHEED-diagrams of vacuum deposited GaAs-films with high density of structural defects often show splitting of matrix reflections into satellites. It can be shown by simple models, for example of {111}-oriented films, that this phenomenon is originated by formation of stacking faults perpendicular to 〈ĪĪĪ〉-B growth directions of the films. The conditions for 〈110〉 and 〈211〉 azimuths are discussed.