Bildungsbedingungen und Struktur dünner Bi1−xSbx-Schichten

Thin polycrystalline Bi_1−xSb_x films in oriented state were deposited by flash evaporation techniques and by catode sputtering. In dependence on the conditions of formation the structure of these films was analysed by means of transmission electron microscopy, electron diffraction and electron beam microanalysis. Estimating the orientation, quality of surface and largeness of the average diameter of the crytallites the flash evaporation technique is superior to the catode sputtering under the experimental conditions chosen in this investigation. The Bi:Sb proportion does not change in comparison with the target, material of the source respectively, during the formation of the film.