Electron and ion beam analysis of composition and strain in Si-x Ge x /Si heterostructures |
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| Authors: | Armigliato Aldo Govoni Donato Balboni Roberto Frabboni Stefano Berti Marina Romanato Filippo Drigo Antonio V. |
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| Affiliation: | (1) CNR-Istituto LAMEL, Via P. Gobetti 101, I-40129 Bologna, Italy;(2) Dipartimento di Fisica dell'Universita', Via Campi 213/A, I-41100 Modena, Italy;(3) Dipartimento di Elettronica per l'Automazione, Facolta' di Ingegneria dell'Universita', Via Branze 38, I-25123 Brescia, Italy;(4) Dipartimento di Fisica dell'Universita', Via Marzolo 8, I-35131 Padova, Italy |
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| Abstract: | Si1–xGex heterostructures have been grown by molecular beam epitaxy, with nominal compositions of 10 and 15 at %. Analytical electron microscopy, Rutherford backscattering spectrometry and ion channeling have been used in order to determine film thickness, Ge molar fraction and tetragonal distortion. The actual Ge concentrations were found to be smaller than the nominal ones. For all the SiGe films a coherent growth was found, with a small deviation from the perfect tetragonal distortion. The good agreement found between the results obtained by each analytical technique demonstrate that these methods of characterization are powerful tools for the control of the epitaxial layer parameters. |
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| Keywords: | silicon-germanium alloys composition determination lattice strain determination convergent beam electron diffraction ion beam analysis |
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