Effect of contamination with iron on the electron-beam-induced current contrast of extended defects in multicrystalline silicon |
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| Authors: | O. V. Feklisova X. Yu D. Yang E. B. Yakimov |
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| Affiliation: | 1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, Chernogolovka, Moscow oblast, Russia
2. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, People??s Republic of China
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| Abstract: | The effect of contamination with iron on the recombination activity of extended defects in multicrystalline silicon has been studied by the electron-beam-induced current (EBIC) technique. It has been shown that this process does not lead to the appearance of EBIC contrast of the ??3 and ??9 grain boundaries. It has been revealed that iron diffusion results in a significant increase in the contrast of dislocations introduced by plastic deformation and of traces behind the dislocations in single-crystal silicon, while the dislocation contrast in multicrystalline silicon remains practically unchanged. |
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