| PECVDSi3N4/InP界面特性的研究 |
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| 引用本文： | 李相民,王存让. PECVDSi3N4/InP界面特性的研究[J]. 光子学报, 1994, 23(2): 139-144 |
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| 作者姓名： | 李相民 王存让 |
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| 作者单位： | 中国科学院西安光学精密机械研究所 |
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| 摘 要： | 本文利用Auger分析技术和C-V测量方法,详细地研究了PECVDSi3N4/InP界面特性,Auger能谱分析表明热处理使界面面发生互扩散,同时InP的热分解导致P元素穿过Si3N4薄膜到达表面。C-V测量表明Ag/Si3N4/InPMIS结构可以实现载流子的堆积、耗尽和反型。
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| 关 键 词： | AES PECVD Si3N4 界面 |
| 收稿时间： | 1993-05-03 |
RESEARCH ON THE PROPERTIES OF PECVD Si3N4/InP INTERFACE |
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| Li Xiangmin,Wang Cunrang,Cheng Jun,Hou Xun,Liu Ying. RESEARCH ON THE PROPERTIES OF PECVD Si3N4/InP INTERFACE[J]. Acta Photonica Sinica, 1994, 23(2): 139-144 |
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| Authors: | Li Xiangmin Wang Cunrang Cheng Jun Hou Xun Liu Ying |
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| Affiliation: | Laboratory of Semiconductor Optronic devices Xi’an Institute of Optics and precision Mechanics Academia Sinica, XJ’an 710068 China |
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| Abstract: | The properties of PECVD Si3 N4/InPinterface were studied usingAugerElectron Spectrum and C-Vmeasurements. As shows that inter-diffusion at Si3 N4/InPinterface is caused after heat-treatment and element is found on the surface offilm.C-Vcurve of Ag/Si3N4 /InP MIS structure shows accumulation. depletion and in-versionregions. |
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| Keywords: | AES PECVD:Si3N4:intefece |
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