| p－Si上电沉积Ni－W合金薄膜 |
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| 引用本文： | 郭永,张国庆,姚素薇,郭鹤桐,龚正烈. p－Si上电沉积Ni－W合金薄膜[J]. 应用化学, 1996, 0(2) |
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| 作者姓名： | 郭永 张国庆 姚素薇 郭鹤桐 龚正烈 |
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| 作者单位： | 天津大学应用化学系，天津理工学院，山西雁北师范学院 |
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| 摘 要： | 利用恒电流沉积法，在ｐ－Ｓｉ上制备出不同Ｗ含量和不同结构的Ｎｉ－Ｗ薄膜，研究了镀液温度，ｐＨ值，电流密度对镀层组成的影响，结果表明，提高温度有利于获得高Ｗ含量的合金．随着镀层中Ｗ含量的增加，Ｎｉ面心立方晶格ｆ．ｃ．ｃ发生正畸变，晶粒平均尺寸变小，当Ｗ含量达到５６％以上时，晶粒小于２ｎｍ，薄膜呈非晶态结构．
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| 关 键 词： | p－Si，Ni－W合金，电沉积，非晶 |
The Electrodeposition of Nickel-Tungsten Films on p-type silicon |
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| Guo Yong, Zhang Guoqing, Yao Suwei, Guo Hetong. The Electrodeposition of Nickel-Tungsten Films on p-type silicon[J]. Chinese Journal of Applied Chemistry, 1996, 0(2) |
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| Authors: | Guo Yong Zhang Guoqing Yao Suwei Guo Hetong |
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| Abstract: | Nickel-tungsten films with different content of W and different structure were prepared by means of galvanostatic electrodeposition. The influence of temperature, pH value and current density on the composition of deposits was investigated. Experimental results showed that a rise in temperature is favorable to the increase of W content. X-ray diffraction was used to determine the film structure. With increase of W content. the f. c. c lattice of nickel is distorted, and the average size of grains becomes smaller. When the content of W in deposits reaches to about 56/00, the size of grains decreases to below 2 nm and the film has an amorphous structure. |
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| Keywords: | p-type silicon nickel-tungsten alloy electrodeposition amorphous state |
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