Si面4H-SiC衬底上外延石墨烯近平衡态制备

SiC热解法是制备大面积、高质量石墨烯的理想选择之一.外延石墨烯的晶体质量仍是制约其应用的关键因素之一.本文通过SiC热解法在4H-SiC(0001)衬底上制备单层外延石墨烯.通过引入氩气惰性气氛和硅蒸气,使SiC衬底表面的Si原子升华与返回概率接近平衡,外延石墨烯生长速率大大减慢,单层石墨烯的生长时间从15 min延长至75 min.测试分析表明,生长速率减慢,外延石墨烯中缺陷减少,晶体质量提高,使得外延石墨烯的电性能都得到改善,单层外延石墨烯的最高载流子迁移率达到1200 cm2/V·s,方阻604?/.以上结果表明,控制生长气氛,减慢生长速率是实现高质量外延石墨烯的可行途径之一.

Quasi-equilibrium growth of monolayer epitaxial graphene on SiC (0001)

Sublimation of SiC substrates is a promising way to prepare high-quality graphene on large scale. Nowadays, growth of high-quality epitaxial graphene is still a crucial issue. In this work, monolayer epitaxial graphene is grown on Si-terminated 4H-SiC (0001) substrate. By introducing argon inert gas and silicon vapor as background atmosphere, the Si evaporation rate and condensation rate on the SiC surface is close to equilibrium and the growth of monolayer epitaxial graphene with very low speed is realized. The growth duration of monolayer epitaxial graphene is prolonged to 75 minutes from 15 minutes. It is found that the disorder-induced Raman D peak shows an obvious decrease as the growth speed decreases, indicating the improvement of crystal quality, which makes the electrical properties of the monolayer epitaxial graphene is improved. The maximum carrier mobility and sheet resistance have reached 1200 cm²/V·s and 604 Ω/, respectively. The above results indicate that slowing down of growth speed by controlling of growth atmosphere is an efficient way to prepare high-quality epitaxial graphene.