| 源漏电极的制备对氧化物薄膜晶体管性能的影响 |
| |
| 引用本文： | 徐华,兰林锋,李民,罗东向,肖鹏,林振国,宁洪龙,彭俊彪.源漏电极的制备对氧化物薄膜晶体管性能的影响[J].物理学报,2014,63(3):38501-038501. |
| |
| 作者姓名： | 徐华 兰林锋 李民 罗东向 肖鹏 林振国 宁洪龙 彭俊彪 |
| |
| 作者单位： | 发光材料与器件国家重点实验室, 华南理工大学材料科学与工程学院, 广州 510640 |
| |
| 基金项目： | 国家高技术研究发展计划（863计划）（批准号：2011AA03A110）、国家重点基础研究发展计划（973计划）（批准号：2009CB623600和2009CB930604）、国家自然科学基金重点项目（批准号：61204087，51173049，U0634003，61036007和60937001）和广东省平板显示项目（批准号：20081202）资助的课题. |
| |
| 摘 要： | 本文采用钼-铝-钼(Mo/Al/Mo)叠层结构作为源漏电极,制备氧化铟锌(IZO)薄膜晶体管(TFT).研究了Mo/Al/Mo源漏电极中与IZO接触的Mo层溅射功率对TFT器件性能的影响.随着Mo层溅射功率的增加,器件开启电压(Von)负向移动,器件均匀性下降.通过X射线光电子能谱(XPS)深度剖析发现IZO/Mo界面有明显的扩散;当Mo层溅射功率减小时,扩散得到了抑制.制备的器件处于常关状态(开启电压为0.5 V,增强模式),不仅迁移率高(～13 cm2·V-1·s-1),而且器件半导体特性均匀.
|
| 关 键 词： | 氧化铟锌 源漏电极 溅射功率 薄膜晶体管 |
| 收稿时间： | 2013-09-27 |
Effect of source/drain preparation on the performance of oxide thin-film transistors |
| |
| Xu Hua,Lan Lin-Feng,Li Min,Luo Dong-Xiang,Xiao Peng,Lin Zhen-Guo,Ning Hong-Long,Peng Jun-Biao.Effect of source/drain preparation on the performance of oxide thin-film transistors[J].Acta Physica Sinica,2014,63(3):38501-038501. |
| |
| Authors: | Xu Hua Lan Lin-Feng Li Min Luo Dong-Xiang Xiao Peng Lin Zhen-Guo Ning Hong-Long Peng Jun-Biao |
| |
| Institution: | State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China |
| |
| Abstract: | Indium-zinc-oxide thin-film transistors (IZO-TFTs) are prepared with the multilayer structure of molybdenum-aluminum-molybdenum (Mo/Al/Mo) as the source/drain (S/D) electrode. Experiment demonstrates that the sputtering power of Mo (bottom layer of Mo/Al/Mo S/D) influences the performance of TFTs significantly. As the sputtering power increases, the Von runs negative shift, and the device uniformity degrades. XPS depth profile shows that the diffusion at the interface (IZO/Mo) occurs seriously. By decreasing the sputtering power, the diffusion can be suppressed and the devices are shown in normal off state (Von ～ 0.5 V, enhanced mode), with higher mobility (～ 13 cm2·V-1·s-1) and improved uniformity. |
| |
| Keywords: | indium-zinc-oxide source/drain electrode sputtering power thin-film transistor |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
