Second-harmonic interferometric spectroscopy of buried interfaces of column IV semiconductors |
| |
| Authors: | TV Dolgova D Schuhmacher G Marowsky AA Fedyanin OA Aktsipetrov |
| |
| Institution: | Department of Physics, Moscow State University, 119899 Moscow, Russia, RU
Laser-Laboratorium G?ttingen, 37077 G?ttingen, Germany, DE
|
| |
| Abstract: | The technique of combined optical second-harmonic (SH) intensity and phase spectroscopy, which is the spectroscopic modification
of SH phase measurements, is proposed to study the nonlinear optical response of semiconductor interfaces with spectrally
close resonant contributions. The spectral dependences of SH intensity and phase from oxidised Si (111) and Ge (111) surfaces
are studied in the range of 3.5- to 5-eV SH photon energy. The resonant behaviour of combined SH spectra is associated with
a superposition of contributions from direct interband transitions at several critical points of Si and Ge band structures.
Received: 16 October 2001 / Revised version: 16 April 2002 / Published online: 6 June 2002 |
| |
| Keywords: | PACS: 71 20 -b 73 20 -r 73 20 At 78 68 +m 42 65 -k |
| 本文献已被 SpringerLink 等数据库收录！ |
|
