| Tunable DBR Lasers Fabricated by Selective Area Growth Technique |
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| 作者单位： | National Research Center for Optoelectronic Technology，Institute of Semiconductors，The Chinese Academy of Sciences，Beijing 100083，China |
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| 基金项目： | SupportedbytheNationalHighTech .86 3project (GrantNo .86 3 30 7 11 1(15 ) )
andtheNationalNatureScienceFoundationofChina (Grant |
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| 摘 要： | 1 Ｉｎｔｒｏｄｕｃｔｉｏｎ ＴｈｅｔｕｎａｂｌｅＤＢＲｌａｓｅｒｓｗｉｔｈｖａｒｉｏｕｓｇｒａｔｉｎｇｒｅｆｌｅｃｔｏｒｓｈａｖｅｂｅｅｎｆａｂｌｉｃａｔｅｄｔｏａｃｈｉｅｖｅｌａｒｇｅｔｕｎｉｎｇｒａｎｇｅａｎｄｓｔａｂｌｅｓｉｎｇｌｅｍｏｄｅｏｐｅｒａｔｉｏｎ1,2 ] .Ｈｏｗｅｖｅｒ,ｔｈｅｓｅｄｅｖｉｃｅｓｃｏｎｔａｉｎｃｏｍｐｌｉｃａｔｅｄｇｒａｔｉｎｇｓａｎｄｗａｖｅｇｕｉｄｅｓ,ａｎｄｉｎｍｏｓｔｃａｓｅｓｔｈｅｙｈａｖｅｓｅｖｅｒａｌｔｕｎｉｎｇｅｌｅｃｔｒｏｄｅｓｏｐｅｒａｔｉｏ…
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| 收稿时间： | 2000/1/11 |
Tunable DBR Lasers Fabricated by Selective Area Growth Technique |
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| LIU Guoli,ZHANG Jingyuan,WANG Xiaojie,ZHANG Baijun,WANG Wei.Tunable DBR Lasers Fabricated by Selective Area Growth Technique[J].中国激光(英文版),2000,9(5):395-399. |
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| Authors: | LIU Guoli ZHANG Jingyuan WANG Xiaojie ZHANG Baijun WANG Wei |
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| Abstract: | The tunable ridge waveguide distributed Brag g reflector (DBR) lasers grown by selective area growth and designed for WDM communication systems at 1.55 μm is reported. The threshold of DBR lasers is 62 mA and the output power is more than 8 mW; the isolation resistance between the active region and Bragg region is 30 kΩ; the tuning range is 6.5 nm which can provide 6 WDM channels with a 100 GHz spacing; in thetuning range, the single mode suppression ratio (SMSR) is more than 32 dB and the output power variation of different wavelengths is less than 3 dB. |
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| Keywords: | selective area growth MOCVD tunable laser DBR laser |
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