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Study of THz-wave-induced photoluminescence quenching in GaAs and CdTe |
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| Authors: | Zheng Chu Jinsong Liu Jingle Liu |
| Institution: | 1. Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China 2. Department of Physics, Applied Physics and Astronomy, Center for Terahertz Research, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA |
| Abstract: | A novel model of ultrafast interaction between THz pulse and carriers is built to study the THz-wave-induced quenching of femtosecond-laser-excited photoluminescence in CdTe and GaAs. Photoluminescence quenching is due to the nonequilibrium intervalley phonons induced by the THz field and subsequent decrease of the recombination efficiency of the electron?Chole pairs. And the PLQ versus laser intensity experimental result agrees with the analysis. |
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