| 退火温度对ZnO薄膜结构和内应变的影响 |
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| 引用本文： | 赵勇,俞进,于鹏,侯硕,梁晓军,方利广,盛广沪.退火温度对ZnO薄膜结构和内应变的影响[J].南昌大学学报(理科版),2011,35(3):1. |
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| 作者姓名： | 赵勇 俞进 于鹏 侯硕 梁晓军 方利广 盛广沪 |
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| 作者单位： | 南昌大学理学院； |
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| 基金项目： | 国家自然科学基金青年基金资助项目(11005059、50801037) |
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| 摘 要： | 采用磁过滤阴极脉冲真空弧沉积技术(pulsed filtered cathodic vacuum arc deposition,PFCVAD),以Si(100)单晶片为衬底,在衬底温度400℃、氧气压力4×10-2Pa、靶负压400 V的条件下制备了具有c轴取向的ZnO薄膜。采用原子力显微镜(AFM)和X射线衍射仪(XRD)研究了退火温度对ZnO薄膜
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| 关 键 词： | ZnO薄膜 PFCVAD 内应变 退火温度 |
Effecct of annealing temperature on structure and intrinsic strain of ZnO films |
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| ZHAO Yong,YU Jin,YU Peng,HOU Shuo,LIANG Xiao-jun,FANG Li-guang,SHENG Guang-hu.Effecct of annealing temperature on structure and intrinsic strain of ZnO films[J].Journal of Nanchang University(Natural Science),2011,35(3):1. |
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| Authors: | ZHAO Yong YU Jin YU Peng HOU Shuo LIANG Xiao-jun FANG Li-guang SHENG Guang-hu |
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| Institution: | ZHAO Yong,YU Jin,YU Peng,HOU Shuo,LIANG Xiao-jun,FANG Li-guang,SHENG Guang-hu(College of Science,Nanchang University,Nanchang 330031,China) |
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| Abstract: | ZnO films with c-axis preferred orientation were deposited on Si(100) single-crystal substrate using the pulsed filtered cathodic vacuum arc deposition(PFCVAD) method,with the deposition parameters setting as: substrate temperature 400 ℃,oxygen pressure |
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| Keywords: | ZnO films intrinsic strain annealing temperature PFCVAD |
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