| Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range |
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| 作者姓名： | 赵见国 陈凯 宫毛高 胡文晓 刘斌 陶涛 严羽 谢自力 李元元 常建华 王潇璇 崔乾楠 徐春祥 张荣 郑有炓 |
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| 作者单位： | 1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering, Nanjing University;2. School of Electronics and Information Engineering, Nanjing University of Information Science and Technology;3. State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering,Southeast University;4. Xiamen University |
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| 基金项目： | supported by the National Natural Science Foundation of China (Grant Nos. 62074077, 61921005, 61974062, and 61904082)；;the China Postdoctoral Science Foundation (Grant No. 2020M671441)；;the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant Nos. 19KJB510006 and 19KJB510039)；;the Natural Science Foundation of Jiangsu Province (Grant No. BK20190765)； |
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| 摘 要： | Nonpolar （11■0） plane InxGa1-x N epilayers comprising the entire In content （x） range were successfully grown on nanoscale Ga N islands by metal-organic chemical vapor deposition.The structural and optical properties were studied intensively.It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33,even though the crystalline quality was gradually declined,which was accompanied by the appearance of phase separation in the Inx
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