| Orbit-Transfer Torque Switching |
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| 作者姓名： | 王业亮 |
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| 作者单位： | School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology |
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| 摘 要： | <正>In the post-Moore era, memory devices with smaller sizes, lower energy consumption, and higher reliability are desired. As a classic type of non-volatile memory, magnetic random-access memory(MRAM)is outstanding, since it keeps data storage by magnetic states(electron spin) instead of electron charges.
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