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抗蚀剂AZ4562曝光参数的变化趋势分析
引用本文:罗铂靓,杜惊雷,刘世杰,郭小伟,马延琴,陈铭勇,杜春雷,郭永康.抗蚀剂AZ4562曝光参数的变化趋势分析[J].固体电子学研究与进展,2006,26(4):550-554.
作者姓名:罗铂靓  杜惊雷  刘世杰  郭小伟  马延琴  陈铭勇  杜春雷  郭永康
作者单位:1. 四川大学物理学院,成都,610064
2. 陕西理工学院物理系,陕西,汉中,723001
3. 微细加工光学技术国家重点实验室,成都,610209
基金项目:国家自然科学基金 , 国家重点实验室基金
摘    要:针对厚胶曝光参数随不同光刻胶厚度及工艺条件变化的特点,在原有Dill曝光模型基础上,建立了适合于描述厚胶曝光过程的增强Dill模型,并将统计分析的趋势面法引入到厚胶曝光参数变化规律的研究中,给出了厚胶AZ4562曝光参数随胶厚及工艺条件的变化趋势,为开展厚胶光刻实验研究和曝光过程模拟提供指导性依据。

关 键 词:厚层抗蚀剂  曝光模型  曝光参数  趋势面分析法
文章编号:1000-3819(2006)04-550-05
收稿时间:2005-01-24
修稿时间:2005-04-12

Trend Aanlysis of Variable Exposure Parameters on Photoresist AZ4562
LUO Boliang,DU Jinglei,LIU Shijie,GUO Xiaowei,MA Yanqin,CHENG Mingyong,DU Chunlei,GUO Yongkang.Trend Aanlysis of Variable Exposure Parameters on Photoresist AZ4562[J].Research & Progress of Solid State Electronics,2006,26(4):550-554.
Authors:LUO Boliang  DU Jinglei  LIU Shijie  GUO Xiaowei  MA Yanqin  CHENG Mingyong  DU Chunlei  GUO Yongkang
Institution:1.Physics Department of Sichuan University, Chengdu, 610064, CHN;2.Physics Department of Shanxi University of Technology, Hanzhong , Shanxi , 723001, CHN;2. State Key Lab. of Optical Technology on Microfabrication, Chinese Academy of Sciences, Chengdu, 610209, CHN
Abstract:In this paper, aiming at the characteristics of exposure parameters during thick photoresist lithography, we present an enhanced Dill exposure model suitable for describing the thick photoresist exposure. And the statistical theroy trend surface analysis is introduced so that the regularity of the exposure parameters varying with the thickness of the thick photoresist and technique conditions can be discovered. At last, the trend analysis of exposure parameters with the thickness of the photoresist AZ4562 is given, which provides an important basis for the experiment or simulation research of the thick photoresist lithography.
Keywords:thick photoresist  exposure model  exposure parameters  trend surface analysis
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