Preparation and photoluminescence properties of silica-coated CuO nanowires |
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Authors: | Changhyun Jin Hyunsoo Kim Chanseok Hong Hyoun Woo Kim Chongmu Lee |
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Affiliation: | (1) State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, People’s Republic of China |
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Abstract: | We have fabricated cupric oxide (CuO)-core/silica (SiO x )-shell nanowires by using a two-step process: thermal oxidation and sputtering. The structure and photoluminescence (PL) properties of the core/shell nanowires has been investigated by using scanning electron microscopy, transmission electron microscopy, X-ray diffraction and PL analysis techniques. The CuO cores and the SiO x shells of the as-synthesized nanowires have crystalline monoclinic CuO and amorphous SiO x structures, respectively. The PL emission intensity of the CuO-core/SiO x -shell nanowires has been increased but the emission peak position has not been nearly shifted by annealing in a nitrogen atmosphere, whereas the emission peak position has been shifted a lot from 510 to around 650 nm as well as the emission intensity has been increased by annealing in an oxygen atmosphere. In addition, the origin of the PL enhancement in the CuO-core/SiO x -shell nanowires by annealing and the growth mechanism of the CuO nanowires have been discussed. |
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