New technique for crystal growth and Phase Transition in TlInS2 Crystals

New technique for crystal growth was designed in the present work. The electrical conductivity and Hall effect of the TInS₂ single crystals, grown by this technique, were measured in the temperature range 150–500 K. From the measurements, the conductivity type, the energy gap, ionization energy of the impurity level, Hall mobility and carrier concentration were determined. Also the measurements revealed a presence of phase transition in the crystal at 189 and 220 K.