| Abstract: | Rapid thermal processing (RTP) has developed in fabrication of ferroelectric (FE) thin films because it can reduce processing temperature and time. It also improves the properties of FE thin films compatible with semiconductor devices. The thin film samples used were prepared by a multi-ion-beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post-deposition annealing in a RTP system. It was found that PbTiO3 (PT) thin film can grow on amorphous or polycrystalline interfacial layer and the PT thin films annealed by RTP showed the prefered [110] and [100] textures. |
