Modification of the CuInSe2 Crystal Surface during Polishing and Annealing

The RBS/channelling technique was used to study the near-surface damage characteristics of CuInSe₂ crystals after polishing with 0.05 μm grade alumina and subsequent annealing up to temperatures of 600 °C. A comparative RUMP and damage density depth profile analysis of the channelling spectra revealed a polish-induced near-surface disordered layer with a thickness close to 40 nm. Up to annealing temperatures of about 400 °C a gradual overall decrease of the defect density in the damaged layer is observed without detectable changes in its thickness. An indium-rich surface layer is formed after vacuum annealing at 600 °C.