| Abstract: | Poly(3-octylthiophene) was used as a negative resist in e-beam microlithography. This conducting polymer fulfills the main requirements placed on materials which can be useful in this type of process. However, chemical modifications leading to crosslinking are not clearly established at this time. Approach of a mechanism is proposed in this paper which is supported by spectroscopic results obtained from the irradiated materials: it seems reasonable that crosslinking might occur between lateral alkyl groups eventually on carbon atoms in allylic position with the formation of a carbon - carbon double bond between locally stacked Poly(3-octylthiophene) chains. |
