Identification of Defects in Semiconductors via their Electric Field Gradients |
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Authors: | Wichert Thomas Lany Stephan |
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Institution: | 1.Technische Physik, Universit?t des Saarlandes, D-66041, Saarbrücken, Germany ;2.Technische Physik, Universit?t des Saarlandes, D-66041, Saarbrücken, Germany ; |
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Abstract: | Recent theoretical calculations show for defect complexes in semiconductors, characterized by electric field gradients (EFG),
that their chemical compositions, electronic charge states and the induced lattice relaxations can be obtained by comparing
the experimental and calculated EFG. The experimental data are obtained by perturbed γγ angular correlation experiments and
the calculations are performed using ab initio full potential methods in the framework of density functional theory.
This revised version was published online in September 2006 with corrections to the Cover Date. |
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Keywords: | EFG semiconductor defects ab initio calculations |
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