Suppressed intermixing in InAlGaAs/ AlGaAs/GaAs and AlGaAs/GaAs quantum well heterostructures irradiated with a KrF excimer laser |
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| Authors: | J Genest JJ Dubowski V Aimez |
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| Institution: | (1) Centre de recherche en Nanofabrication et Nanocaractériasation (CRN2), Département de Génie électrique et Génie Informatique, Université de Sherbrooke, Sherbrooke, Québec, J1K 2R1, Canada |
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| Abstract: | The influence of gallium arsenide surface modification induced by irradiation with a KrF excimer laser on the magnitude of
the quantum well (QW) intermixing effect has been investigated in InAlGaAs/AlGaAs/GaAs QW heterostructures. The irradiation
in an air environment with laser pulses of fluences between 60 and 100 mJ/cm2 has resulted in the formation of a gallium oxide-rich film at the surface. Following the annealing at 900 °C, up to 35 nm
suppression of the band gap blue shift was observed in all the laser irradiated samples when compared to the non-irradiated
samples. The origin of suppression has been discussed in terms of stress controlled diffusion.
PACS 78.55.Et; 66.30.Lw; 73.21.Fg |
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