The effect of temperature on the recombination rate of AlGaN/GaN light emitting diodes |
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| Authors: | Sara Shishehchi Asghar Asgari and Reza Kheradmand |
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| Institution: | 1.Research Institute for Applied Physics,University of Tabriz,Tabriz,Iran;2.School of Electrical, Electronic and Computer Engineering,The University of Western Australia,Crawley,Australia |
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| Abstract: | Nitride semiconductors and their alloys recently have versatile applications as high-power and high-efficiency electro optical
devices duo to their high thermal stability, direct transition and wide bang-gap. Nanostructure light emitting diodes of these
materials have an emission spectrum from infrared to ultraviolet. In this paper, besides simulating a nanostructure nitride
semiconductor LED, such as multi quantum well nitride LEDs, the effect of temperature on the recombination rate has been investigated. |
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