Structure and composition of silicon carbide films synthesized by ion implantation |
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Authors: | K. Kh. Nussupov N. B. Beisenkhanov S. K. Zharikov I. K. Beisembetov B. K. Kenzhaliev T. K. Akhmetov B. Zh. Seitov |
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Affiliation: | 1. Kazakh-British Technical University, Tole bi 59, Almaty, 050000, Kazakhstan
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Abstract: | The mathematical decomposition of the IR absorption spectrum obtained from a Si layer after the C+ ion implantation with an energy of 10 or 40 keV or from a homogeneous SiC0.7 film has demonstrated that fractions of weak elongated Si-C bonds in the amorphous phase, strong shortened Si-C bonds on the surface of small nanocrystals, and tetrahedral Si-C bonds in the crystalline phase (degree of crystallinity) after high-temperature annealing (1250–1400°C) of the layers are equal to 29/29/42, 22/7/71, and 21/31/48%, respectively. A system of SiC2.0, SiO2, SiC0.8, and SiC0.6 layers in the film on the Si substrate has been identified using X-ray reflectometry and the simulation with the Release software. The reflectometry data on fluctuations of the intensity of X-ray reflections in the region of the main maximum have been interpreted in terms of variations in the density over the depth of the layer with a Gaussian distribution of carbon atoms from 2.55 and 2.90 g/cm3 for the SiC0.25 and SiC0.65 layers, respectively, to 3.29 g/cm3 for the SiC1.36 layer. |
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