Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots |
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| Authors: | B. Kh. Baîramov V. A. Voįtenko B. P. Zakharchenya V. V. Toporov M. Henini A. J. Kent |
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| Affiliation: | 1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
2. Department of Physics, University of Nottingham, NG7 2RD, Nottingham, UK
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| Abstract: | The development of a method for registering quasielastic electronic light scattering spectra in the near-IR region, which makes it possible to detect light scattering by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of a self-organized ensemble of InAs quantum dots, is reported. A substantial resonance intensification of such scattering, two orders of magnitude greater than the values established for the bulk material, is observed, and the main mechanism of such scattering is determined. |
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