Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs |
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| Authors: | Assaderaghi F Chen J Solomon R Chian T-Y Ko PK Hu C |
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| Institution: | Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA; |
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| Abstract: | It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested |
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