| 光电开关锁定机理的理论分析 |
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| 引用本文： | 赵会娟 牛憨笨. 光电开关锁定机理的理论分析[J]. 光子学报, 1997, 26(1): 61-65 |
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| 作者姓名： | 赵会娟 牛憨笨 |
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| 作者单位： | 中国科学院西安光学精密机械研究所!710068 |
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| 摘 要： | 光电开关锁定(lock-on)现象自1990年报道以来已受到广泛关注,许多学者研究其机理并已开展研究将其应用到高压脉冲发生系统中,但目前所有的研究尚处于起步阶段.本文就光电开关锁定机理作了较全面的理论分析,认为光电开关的锁定是光与电联合作用的结果,耿氏效应引起场强动态增强,光脉冲产生的光电子引起本征碰撞电离,从而比较完整地解释了光电开关处于锁定状态时的增益现象.
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| 关 键 词： | 光电开关 锁定 |
| 收稿时间： | 1996-02-14 |
THE THEORETICAL ANALYSIS OF THE LOCK-ON EFFECT IN PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES |
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| Zhao Huijuan, Niu Hanben. THE THEORETICAL ANALYSIS OF THE LOCK-ON EFFECT IN PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES[J]. Acta Photonica Sinica, 1997, 26(1): 61-65 |
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| Authors: | Zhao Huijuan Niu Hanben |
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| Affiliation: | Xi’an Institute of Optics and Precision Mechanics, Academia Sinica 710068 |
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| Abstract: | The lock-on of photoconductive semiconductor switches (PCSS) has been reported in 1990.Although many studies have been done in utilizing the lock-on effect to the pulses forming circuit, themechanisms of lock-on is not very clear yet. This paper will describe the lock-on effect and our recentstudies to understand the effect. We will show that electric strength and the laser pulse account for thelock-on effect together. Gunn instabilities produce dynamic field enhancement, the photo-electroninduces impact ionization. |
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| Keywords: | Photoconductive semiconductor switches Lock-on |
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