Radiation-induced resistance oscillation and instability in GaAS/AlGaAS heterostructure under transverse magnetic fields |
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Authors: | Yang Gui Tu Bi-Hong Li Guo-Hui Zhao Hong-Wei Zhou Shi-Ping |
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Affiliation: | Department of Communication Engineering, ShanghaiUniversity, Shanghai 200072, China; Department of Physics, Shanghai University,Shanghai 200444, China |
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Abstract: | This paper studies dynamics of a modulation-doped GaAs/AlGaAsheterostructure under transverse magnetic fields and microwaveradiations. It finds that negative differential conductivity, due tothe real-space electron transfer and delayed dielectric relaxation ofthe interface potential barrier, can lead to complex behaviours whena relatively small magnetic field is applied. Quasiperiodicity,frequency-locking and the routes from period-doubling to chaos arefound. Under a large magnetic field, however, two time-independenthomogeneous steady states exist; and the longitudinal resistance ofthe system shows an interesting oscillation with period tuned by theratio of microwave radiation frequency $omega$ to the cyclotronfrequency $omega_{rm c}$ and local minima at $omega/omega_{rmc}={rm integer}+1/4$. |
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Keywords: | heterostructure chaos bifurcation resistance oscillation |
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