InAs/GaSb II类超晶格红外探测器背减薄技术研究

针对InAs/GaSb II类超晶格红外探测器开发高质量背减薄工艺，获得了高质量衬底表面，改善了超晶格红外探测器组件的成像品质。采用机械抛光和机械化学抛光相结合的工艺减薄衬底，其中机械抛光削减衬底大部分厚度，然后通过机械化学抛光去除机械损伤。机械化学抛光过程中，在压力、转速等不变的情况下，主要研究机械化学抛光液的pH值对衬底表面质量的影响。实验结果表明，当机械化学抛光液的pH值为9.4时，获得了高质量、低损伤的芯片衬底表面，并实现了最佳的探测器组件成像效果。

Study on Back Thinning Technology of InAs/GaSb Type-II Superlattice Infrared Detector

High quality substrate thinning process is developed for InAs/GaSb type-II superlattice infrared detectors to obtain high quality substrate surface and improve the quality of superlattice infrared detectors. A combination of mechanical polishing and mechanochemical polishing is used to thin the substrate, in which mechanical polishing reduces most of the thickness of the substrate, and then mechanical damage is removed through mechanochemical polishing. In the process of mechanochemical polishing, the influence of the pH value of the mechanochemical polishing solution on the surface quality of the substrate is mainly studied while the pressure, speed, and other factors remain unchanged. The experiment shows that when the pH value of the mechanochemical polishing solution is 9.4, a high-quality and low damage substrate surface is obtained, and the imaging effect of the detector component is the best.