Ablation of silicon suboxide thin layers |
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Authors: | M Jahn J Richter R Weichenhain-Schriever J Meinertz J Ihlemann |
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Institution: | (1) Department of Mechanical Engineering, Laboratory for Lasers, MEMS and Nanotechnology, Iowa State University, Ames, IA 50011, USA; |
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Abstract: | We investigate the ablation of SiO
x
thin films on fused silica substrates using single-pulse exposures at 193 nm and 248 nm. Two ablation modes are considered:
front side (the surface of a film is irradiated from above) and rear side (a film is irradiated through its supporting substrate).
Fluence is varied from below 200 mJ/cm2 to above 3 J/cm2. SiO
x
films of thickness 200 nm, 400 nm, and 600 nm are ablated. In the case of rear-side illumination, at moderate fluences (around
0.5 mJ/cm2) the ablation depth corresponds roughly to the film thickness, above 1 J/cm2 part of the substrate is ablated as well. In the case of front-side ablation the single-pulse ablation depth is limited for
all film thicknesses to less than 200 nm even at fluences up to 4 J/cm2. Experimental results are discussed in relation to film thickness, fluence, and ablation mode. Simple numerical calculations
are performed to clarify the influence of heat transport on the ablation process. |
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Keywords: | |
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