400 mW and 16.5% wavelength conversion efficiency at 488 nm using a diode laser and a PPLN crystal in single pass configuration |
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Authors: | M. Uebernickel C. Fiebig G. Blume K. Paschke B. Eppich R. Güther G. Erbert |
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Affiliation: | 1.Ferdinand-Braun-Institut für H?chstfrequenztechnik,Berlin,Germany |
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Abstract: | Continuous wave power of more than 400 mW at 488 nm has been generated by frequency doubling of 2.45 W at 976 nm obtained from a distributed Bragg reflector tapered diode laser. This results in a wavelength conversion efficiency of 16.5% and an electrical-to-optical efficiency of more than 4.5%. We used a 50 mm long periodically poled MgO:LiNbO3 bulk crystal in single-pass configuration for the second harmonic generation. This is to the author’s knowledge the highest output power and the highest wavelength conversion efficiency at 488 nm generated by a monolithic semiconductor laser device in single pass configuration with a bulk crystal. A deviation from the quadratic dependency of the frequency doubling is explained by the decrease of the beam quality of the fundamental wave. |
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Keywords: | KeywordHeading" >PACS 42.65.Ky 42.55.Px 42.60.Pk |
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