Core-level study of WSi2 (110) |
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| Authors: | H. I. P. Johansson K. L. Håkansson L. I. Johansson A. N. Christensen |
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| Affiliation: | (1) Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;(2) Department of Chemistry, Aarhus University, DK-8000 Aarhus C, Denmark |
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| Abstract: | Angle resolved core level studies of the Si 2p and W 4f levels have been carried out on the (110) surface of a WSi2 single crystal using synchrotron radiation. Surface shifted components have been revealed both in the Si 2p and W 4f spectra. Investigations were carried out at two different annealing temperatures. The results indicate Si enrichment at the surface, and a larger enrichment after the higher temperature anneals. The reactivity upon initial oxygen exposure was investigated. Strong Si oxidation was observed but chemically shifted W 4f components could also be detected. |
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| Keywords: | 73.20.-r 79.60.Bm |
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