热丝加热电流对CH薄膜沉积速率和表面形貌的影响

 热丝辅助裂解法是结合气相沉积制备聚对二甲苯薄膜和热丝化学气相沉积而形成的一种制-CH薄膜的新方法。热丝辅助裂解法的最大特点就是在保持低衬底温度情况下可以获得高沉积速率，而热丝加热电流对薄膜沉积速率和薄膜表面形貌具有重要影响。研究表明，热丝加热电流越大，薄膜沉积速率越高，在加热电流9A时，薄膜沉积速率可达0.002mm/min，同时薄膜表面粗糙度随之增加，薄膜表面也开始出现其它元素污染，因此，一般热丝加热电流选择为7A附近。

Effects of hot-wire current on deposition rate and surface morphology of CH film

The CH film is widely used in the inertial confinement fusion experiment for its excellent properties especially for the plasma and X-ray diagnoses. There are many methods to produce the CH film, and different method will lead to different application in the target fabrication. The method of hot wire assistance chemical vapor deposition to produce the CH film can enhance the deposition rate and keep low substrate temperature. This paper focuses on the effects of the hot-wire current on the deposition rate and the surface morphology of the CH film. Experiments show that the deposition rate increases and the film surface roughness increases when the current increases. Based on these experiments the film production mechanism is discussed.