Scattering-parameter measurements of laser diodes |
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| Authors: | Zhu NH Liu Y Pun EYB Chung PS |
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| Institution: | (1) State Key Laboratory on Integrated Optoelectronics, National Research Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing, 100083, PR China;(2) Department of Electronic Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong |
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| Abstract: | An accurate and simple technique for measuring the input reflection coefficient and the frequency response of semiconductor laser diode chips is proposed and demonstrated. All the packaging parasitics could be obtained accurately using a calibrated probe, and the impedance of the intrinsic diode chip is deduced from the directly measured reflection coefficient. The directly measured impedance of a laser diode is affected strongly by the short bond wire. In the frequency response (S
21) measurements of semiconductor laser diode chips, the test fixture consists of a microwave probe, a submount, and a bond wire. The S-parameters of the probe could be determined using the short-open-match (SOM) method. Both the attenuation and the reflection of the test fixture have a strong influence on the directly measured frequency response, and in our proposed technique, the effect of test fixture is completely removed. |
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| Keywords: | microwave network analyzer scattering-parameter measurement semiconductor laser diode test fixture calibration |
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