Carbon background in P-based III-V semiconductors grown by metalorganic molecular beam epitaxy using ethyl-metalorganic sources |
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| Authors: | M Yoshimoto S Tanaka T Tsuji H Kurata K Nishimura and H Matsunami |
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| Institution: | a Department of Electrical Engineering, Kyoto University Sakyo, Kyoto 606-01 Japan |
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| Abstract: | Electrical properties of InP, GaP, InGaP and AlGaP, grown by metalorganic molecular beam epitaxy (MOMBE) using ethyl-metalorganics (triethyl-indium, -gallium and -alluminum), are discussed in connection with the carbon background. More C atoms are incorporated into epilayers in the order of AlGaP, GaP and InP. The C atoms act as accepters in AlGaP and GaP epilayers, but they probably work as donors in InP. InGaP showed highly resistive or compensated possibly due to the amphoteric nature of C atoms. |
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