Schottky barrier formation in the low metal coverage limit |
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| Authors: | F. Flores, R. Rinc n, J. Ortega, F.J. Garcí a-Vidal,R. P rez |
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| Affiliation: | Departamento de Física de la Materia Condensada C-XII. Facultad de Ciencias. Universidad Autónoma. E-28049, Madrid, Spain |
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| Abstract: | A theoretical discussion of the state of the art in the field of Schottky barrier formation is presented. The thin metal layer limit is analyzed for Al and In on GaAs(110), and the adsorption sites are determined as a function of the metal coverage. Intrinsic and extrinsic charge neutrality levels are also discussed for the In-case. |
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