Influence of off-set energy on the electrical characteristics of Si resonant tunneling MOST (SRTMOST)

The effects of the off-set energy between the dielectric films which are formed at the both edges of the channel and the Si substrate on the electrical characteristics are examined for the Si resonant tunneling MOST (SRTMOST). The barrier height of the dielectric films has a great influence on the operation of the SRTMOST. The relationship between the transmission coefficient and the off-set energy of the double barrier/Si is calculated as well as the relationships between the gate-off currents, the transition time from the source to the drain and the off-set energy. It was found that the critical off-set energy of dielectric film/Si is approximately 1.0–1.5 eV.