| 用光伏谱方法研究InGaAs/GaAs应变量子阱的性质 |
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| 引用本文： | 吴正云,王小军,余辛,黄启圣. 用光伏谱方法研究InGaAs/GaAs应变量子阱的性质[J]. 物理学报, 1997, 46(7): 1395-1399 |
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| 作者姓名： | 吴正云 王小军 余辛 黄启圣 |
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| 作者单位： | 厦门大学物理系 |
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| 基金项目： | 国家自然科学基金及福建省自然科学基金资助的课题. |
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| 摘 要： | 采用低温光伏谱方法，研究了应变In0.18Ga0.82/GaAs单量子阱结构中各子能级之间的光跃迁，并与理论计算的结果进行比较，对光伏谱的谱峰跃迁能量随温度变化的分析，表明量子阱中的应变与温度基本无关．研究了光伏谱的谱峰半高宽度随温度的变化关系．讨论了声子关联、混晶组分起伏及生长界面不平整对光伏谱谱峰宽度的影响关键词：
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| 关 键 词： | 低温光伏谱 铟镓砷 砷化镓 应变量子阱 |
| 收稿时间： | 1996-12-19 |
PHOTOVOLTAIC INVESTIGATION ON THE STRAINED InGaAs/GaAs QUANTUM WELL |
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| WU ZHENG YUN,WANG XIAO JUN,YU XIN and HUANG QI SHENG. PHOTOVOLTAIC INVESTIGATION ON THE STRAINED InGaAs/GaAs QUANTUM WELL[J]. Acta Physica Sinica, 1997, 46(7): 1395-1399 |
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| Authors: | WU ZHENG YUN WANG XIAO JUN YU XIN HUANG QI SHENG |
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| Abstract: | The low temperature photovoltaic (PV) spectroscopy was used to study the optical transitions between subbands of strained In0.18Ga0.82As/GaAs quantum well,experimental results are well consistent with that of theoritical calculation. The dependence of PV peak transition energy on temperature has been analysed and the strain factor and conduction band offset Qc for quantum well have been found to be almost independent of temperature.The full width at half maxium (HWHM) of transition peaks as a function of temperature has been studied. From a good fit,we discuss the influences of the exciton phonon coupling,alloy disorder and interface roughness on the line shape. |
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