| 低温氮化硅薄膜的介电性能研究 |
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| 引用本文： | 叶超,宁兆元,马云秀,沈明荣,汪浩,甘肇强.低温氮化硅薄膜的介电性能研究[J].物理学报,1997,46(6):1199-1205. |
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| 作者姓名： | 叶超 宁兆元 马云秀 沈明荣 汪浩 甘肇强 |
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| 作者单位： | (1)苏州大学物理科学与技术学院; (2)苏州市第三中学 |
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| 摘 要： | 研究了微波电子回旋共振等离子体化学汽相沉积低温氮化硅薄膜在5—106Hz频率范围内的介电性能．由于低温氮化硅薄膜为具有分形结构的纳米非晶薄膜，致使氮化硅薄膜的介电谱、损耗谱在低频区和高频区具有两种不同的分布规律．在低频区介电谱具有ε′∝ωn－11的关系，ｎ1在0.82—0.88之间，是电子跳跃导电的结果；在高频区介电谱具有ε′∝ωn-12的关系，n2在0
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| 关 键 词： | 低温 氮化硅 薄膜 纳米非晶薄膜 介电性能 |
| 收稿时间： | 1996-09-16 |
DIELECTRIC PROPERTIES OF SiNx FILMS DEPOSITED AT LOW TEMPERATURE |
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| YE CHAO,NING ZHAO-YUAN,MA YUN-XIU,SHEN MING-RONG,WANG HAO and GAN ZHAO-QIANG.DIELECTRIC PROPERTIES OF SiNx FILMS DEPOSITED AT LOW TEMPERATURE[J].Acta Physica Sinica,1997,46(6):1199-1205. |
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| Authors: | YE CHAO NING ZHAO-YUAN MA YUN-XIU SHEN MING-RONG WANG HAO and GAN ZHAO-QIANG |
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| Abstract: | The dielectric properties of SiNx films,which were deposited at low temperature by microwave electron cyclotron resonance plasma chemical vapor deposition,have been investigated.The frequency dependence of ε′and ε″ have two kinds of power-law dependence in the frequency range of 5—106Hz due to the fractal structure in nanometer-sized amorphous films.The relationship between ε′and ωn－11 with n1=0.82—0.88- due to electron hopping are obtained at low frequency region,and the relationship between ε′ and- ωn－12 with n2=0.05 due to the fractal structure conduction are- obtained at high frequency region. |
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