| 约瑟夫森结AlOx-Al隧道势垒的实验研究 |
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| 引用本文： | 刘必荣,H.MANTLE. 约瑟夫森结AlOx-Al隧道势垒的实验研究[J]. 物理学报, 1997, 46(1): 22-27 |
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| 作者姓名： | 刘必荣 H.MANTLE |
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| 作者单位： | (1)安徽大学物理系; (2)瑞士邮电科学院 |
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| 摘 要： | 通过Ｘ光电子能谱（ＸＰＳ）、阳极氧化电压谱（ＡＶＳ）和Ｆｉｓｋｅ台阶电压的测量，研究了约瑟夫森结中ＡｌＯx-Ａｌ隧道势垒．发现结的隧道势垒最佳沉积Ａｌ层厚度为７ｎｍ，Ａｌ上形成ＡｌＯx厚度只取决于氧化条件，与沉积Ａｌ厚无关，势垒Ａｌ氧化物可能含有一个像ＡｌＯＯＨ态的ＯＨ基团．同时，估算了剩余Ａｌ厚度，证实了结中Ａｌ／Ｎｂ间在４.２Ｋ时，由常态Ａｌ而产生临近效应的存在关键词：
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| 关 键 词： | 约瑟夫森结 隧道势垒 半导体量子论 |
| 收稿时间： | 1995-09-27 |
INVESTIGATION OF THE AlOx-Al TUNNELING-BARRIER IN JOSEPHSON JUNCTIONS |
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| LIU BI-RONG and H.MANTLE. INVESTIGATION OF THE AlOx-Al TUNNELING-BARRIER IN JOSEPHSON JUNCTIONS[J]. Acta Physica Sinica, 1997, 46(1): 22-27 |
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| Authors: | LIU BI-RONG and H.MANTLE |
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| Abstract: | We have studied the AlOx-Al tunneling barrier in Josephson junctions by measuring XPS, AVS and Fiske step voltage.From these measurements we have found that the minimal optimum deposition Al layer thickness is 7nm in the tunneling barrier of junction that the thickness of the AlOx formed on Al only depends on oxidation condition and that the Al oxide in the tunneling barrier structure can contain an OH radical as AlOOH state.Also we evaluated the remnant Al thickness,and confirmed that the proximity effect generated by normal Al between the AlOx and low Nb exists. |
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