| 碲镉汞表面钝化新方法 |
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| 引用本文： | 龚海梅,李言谨,方家熊.碲镉汞表面钝化新方法[J].物理学报,1997,46(7):1400-1405. |
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| 作者姓名： | 龚海梅 李言谨 方家熊 |
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| 作者单位： | 中国科学院上海技术物理研究所 |
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| 基金项目： | 中国科学院传感技术国家重点实验室资助的课题. |
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| 摘 要： | 提出了脉冲式阳极氧化生长碲镉汞表面钝化膜的方法．自行设计研制成功一种新颖的脉冲式阳极氧化装置，获得了优于传统恒流方式生长的碲镉汞阳极氧化膜界面，并结合扫描电子显微镜、俄歇电子能谱和光电导衰退法观测了脉冲氧化对碲镉汞表面的影响．探索到一种能够使表面复合速度降得最低的最佳脉冲氧化条件．对脉冲氧化膜的生长机制进行了分析讨论
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| 关 键 词： | 碲镉汞 表面钝化 界面 红外材料 钝化膜 |
| 收稿时间： | 1996-05-20 |
A NEW METHOD OF SURFACE PASSIVATION FOR MERCURY CADMIUM TELLURIDE |
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| GONG HAI-MEI,LI YAN-JIN and FANG JIA-XIONG.A NEW METHOD OF SURFACE PASSIVATION FOR MERCURY CADMIUM TELLURIDE[J].Acta Physica Sinica,1997,46(7):1400-1405. |
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| Authors: | GONG HAI-MEI LI YAN-JIN and FANG JIA-XIONG |
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| Abstract: | We have developed a new method of passivating the surfaces of mercury cadmium telluride (MCT) by growing anodic oxidation films in a pulse mode. A novel equipment of pulse anodic oxidation was designed and developed successfully. The interface obtained by this method was superior to that grown by the traditional constant current. The influence of pulse oxidation on MCT surface was investigated by means of SEM, AES and photoconductivity decay. The optimum pulse oxidation condition to reduce the surface recombination velocities has been investigated. The mechanism of the growth of pulse oxidation film is analyzed and discussed. |
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