| 能谷间相互作用对量子阱Ge0.3Si0.7/Si/Ge0.3Si0.7的电子能带结构的影响 |
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| 引用本文： | 徐至中. 能谷间相互作用对量子阱Ge0.3Si0.7/Si/Ge0.3Si0.7的电子能带结构的影响[J]. 物理学报, 1997, 46(4): 775-782 |
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| 作者姓名： | 徐至中 |
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| 作者单位： | 复旦大学物理系 |
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| 基金项目： | 国家自然科学基金资助的课题. |
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| 摘 要： | 采用建立在经验赝势理论基础上的推广k·p方法及电流密度算符技术，计算了生长在Ge0.3Si0.7（001）衬底上的量子阱Ge0.3Si0.7/Si/Ge0.3Si0.7的导带电子束缚能级．详细地研究了因能谷间相互作用而引起的能级分裂情况，同时也讨论了电子束缚能级在阱平面方向上的色散关系关键词：
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| 关 键 词： | 硅半导体 电子能带结构 量子阱 |
| 收稿时间： | 1996-05-02 |
THE EFFECTS OF INTERVALLEY INTERACTIONS ON THE ELECTRONIC STRUCTURES IN QUANTUM WELLS Ge0.3Si0.7/Si/Ge0.3Si0.7 GROWN ON Ge0.3Si0.7(001) |
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| XU ZHI ZHONG. THE EFFECTS OF INTERVALLEY INTERACTIONS ON THE ELECTRONIC STRUCTURES IN QUANTUM WELLS Ge0.3Si0.7/Si/Ge0.3Si0.7 GROWN ON Ge0.3Si0.7(001)[J]. Acta Physica Sinica, 1997, 46(4): 775-782 |
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| Authors: | XU ZHI ZHONG |
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| Abstract: | Using the generalized k·p method based on empirical pseudopotential theory associated with boundary conditions of current density operator,the electronic bound levels are calculated for quantum wells Ge0.3Si0.7/Si/Ge0.3Si0.7 grown on Ge0.3Si0.7(001).The energy level splitting by intervalley interactions is studied in detail and the dispersions of electronic bound levels in the well plane are also discussed. |
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