| n+-Si与p-Si衬底上含纳米硅的SiO2膜电致发光 |
| |
| 引用本文： | 张亚雄,李安平,陈开茅,张伯蕊,孙允希,秦国刚,马振昌,宗婉华.n+-Si与p-Si衬底上含纳米硅的SiO2膜电致发光[J].物理学报,1997,46(5):1011-1014. |
| |
| 作者姓名： | 张亚雄 李安平 陈开茅 张伯蕊 孙允希 秦国刚 马振昌 宗婉华 |
| |
| 作者单位： | (1)北京大学物理系; (2)电子工业部第13研究所 |
| |
| 摘 要： | 对于Au/富Si-SiO2/p-Si和Au/富Si-SiO2／n+-Si这两种结构，研究并比较了它们的电致发光特性．对于前者，当正向偏压大于4V时发射红光，而加反向偏压时不发光；对于后者，加正向偏压不发光，而当反向偏压大于3.5V时发射红光．着重讨论了Au/富Si-SiO2/n+-Si的电致发光机制
关键词：
|
| 关 键 词： | 多孔硅 纳米硅 光致发光 二氧化硅 |
| 收稿时间： | 1996-06-13 |
ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES |
| |
| ZHANG YA-XIONG,LI AN-PING,CHEN KAI-MAO,ZHANG BO-RUI,SUN YUN-XI,QIN GUO-GANG,MA ZHEN-CHANG and ZONG WAN-HUA.ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES[J].Acta Physica Sinica,1997,46(5):1011-1014. |
| |
| Authors: | ZHANG YA-XIONG LI AN-PING CHEN KAI-MAO ZHANG BO-RUI SUN YUN-XI QIN GUO-GANG MA ZHEN-CHANG and ZONG WAN-HUA |
| |
| Abstract: | The structures of Au/Si-rich SiO2/p-Si and Au/Si-rich SiO2/n+-Si have been fabricated and their electroluminescence characteristics have comparatively been studied. For the Au/Si-rich SiO2/p-Si structure, when the forward bias is more than 4V, red light is emitted, while under the reverse bias, no light is observed. For Au/Si-rich SiO2/n+-Si structure, it does not emit light under the forward bias, but it emits red light when the reverse bias is greater than 3.5V. The mechanism for electroluminescence from the Au/Si-rich SiO2/n+-Si structure is disscussed. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
