Forthcoming papers

Kβ X-ray spectra of Si and SiO₂ have been measured accurately with a double crystal spectrometer. The measuredKβ spectrum of silicon element was compared with calculations of the electronic density of states. Observed intensity distribution shows that thep-electrons predominate at the top of the valence band, and somep-like states extend to the middle of the valence band. According to MO calculations the most intensiveKβ line of SiO₂ is 4t ₂ (100), the 3t ₂ (16) line is 17.9 eV lower, and 5t ₂ (5) line 6.3 eV higher. In our measurements the energy differences are 13.0 and 4 eV, respectively, and intensities 30% and 3% from the main line.